N-Channel Power MOSFET featuring 450V drain-source voltage and 4.9A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.63-ohm drain-source resistance and is housed in a TO-220AB package for through-hole mounting. Key switching characteristics include an 8.7ns turn-on delay and a 27ns fall time, with a maximum power dissipation of 40W. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant component is ideal for power switching applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI744GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.9A
Drain to Source Resistance
630mR
Drain to Source Voltage (Vdss)
450V
Fall Time
27ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.4nF
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
630mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
58ns
Turn-On Delay Time
8.7ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI744GPBF Datasheet
Download the complete datasheet for Vishay IRFI744GPBF to view detailed technical specifications.
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