N-Channel Power MOSFET featuring 450V drain-source voltage and 4.9A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.63-ohm drain-source resistance and is housed in a TO-220AB package for through-hole mounting. Key switching characteristics include an 8.7ns turn-on delay and a 27ns fall time, with a maximum power dissipation of 40W. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant component is ideal for power switching applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI744GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Resistance | 630mR |
| Drain to Source Voltage (Vdss) | 450V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 1.4nF |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 630mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 8.7ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFI744GPBF Datasheet
Download the complete datasheet for Vishay IRFI744GPBF to view detailed technical specifications.
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