N-Channel Power MOSFET, 500V Drain-Source Voltage (Vdss) and 2.1A Continuous Drain Current (ID). Features 3 Ohm Drain-Source On-Resistance (Rds On Max) and 30W Max Power Dissipation. This silicon Metal-Oxide Semiconductor FET utilizes a TO-220-3 through-hole mount package. Operating temperature range is -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI820G technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.1A
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
500V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
360pF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3R
RoHS Compliant
No
Turn-Off Delay Time
33ns
Turn-On Delay Time
8ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFI820G Datasheet
Download the complete datasheet for Vishay IRFI820G to view detailed technical specifications.
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