VISHAY

IRFI820GPBF

500V 2.1A N-Channel MOSFET TO-220 3R Rds On

Vishay

IRFI820GPBF

Name: IRFI820GPBF Vishay
Brand: Vishay
SKU: IRFI820GPBF

500V 2.1A N-Channel MOSFET TO-220 3R Rds On

N-Channel Power MOSFET, 500V Vdss, 2.1A continuous drain current, and 3 Ohm drain-source on-resistance. Features include an 8ns turn-on delay, 16ns fall time, and 33ns turn-off delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-220AB package with through-hole mounting and operates from -55°C to 150°C. It offers 30W max power dissipation and is RoHS compliant.

PackageTO-220-3

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Vishay IRFI820GPBF technical specifications.

General

Package/Case	TO-220-3
Continuous Drain Current (ID)	2.1A
Drain to Source Resistance	3R
Drain to Source Voltage (Vdss)	500V
Drain-source On Resistance-Max	3R
Fall Time	16ns
Gate to Source Voltage (Vgs)	20V
Height	9.8mm
Input Capacitance	360pF
Isolation Voltage	2kV
Lead Free	Lead Free
Length	10.63mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	30W
Mount	Through Hole
Number of Channels	1
Package Quantity	1000
Packaging	Rail/Tube
Polarity	N-CHANNEL
Radiation Hardening	No
Rds On Max	3R
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Threshold Voltage	4V
Turn-Off Delay Time	33ns
Turn-On Delay Time	8ns
Weight	0.211644oz
Width	4.83mm