N-channel power MOSFET featuring 500V drain-source voltage and 4.5A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.85 ohm drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 40W. Key switching characteristics include a 12ns turn-on delay and 19ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Vishay IRFI840GLCPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.5A
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
850mR
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
9.8mm
Input Capacitance
1.1nF
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Rds On Max
850mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
27ns
Turn-On Delay Time
12ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI840GLCPBF Datasheet
Download the complete datasheet for Vishay IRFI840GLCPBF to view detailed technical specifications.
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