P-channel MOSFET with 100V drain-source voltage and 7.7A continuous drain current. Features 300mΩ drain-source on-resistance and 42W maximum power dissipation. This silicon, metal-oxide semiconductor FET is designed for through-hole mounting in a TO-220AB package. Operates from -55°C to 175°C with a gate-source voltage rating of 20V. Includes input capacitance of 860pF and switching times including a 12ns turn-on delay.
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
Power42W
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Technical Specifications
Vishay IRFI9530G technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 860pF |
| Lead Free | Contains Lead |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFI9530G Datasheet
Download the complete datasheet for Vishay IRFI9530G to view detailed technical specifications.
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