P-channel power MOSFET featuring 250V drain-source voltage and 4.1A continuous drain current. Offers 1 ohm drain-source resistance at a nominal gate-source voltage of -4V. This through-hole component, housed in a TO-220-3 package, exhibits a maximum power dissipation of 35W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 12ns turn-on delay and a 21ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFI9634G technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.1A
Drain to Source Resistance
1R
Drain to Source Voltage (Vdss)
-250V
Fall Time
21ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
680pF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Nominal Vgs
-4V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
1R
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Turn-Off Delay Time
34ns
Turn-On Delay Time
12ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFI9634G Datasheet
Download the complete datasheet for Vishay IRFI9634G to view detailed technical specifications.
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