P-channel MOSFET, 60V Drain-Source Breakdown Voltage, 5.3A Continuous Drain Current, and 0.5 Ohm Drain-Source Resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB package with through-hole mounting. It offers a maximum power dissipation of 27W and operates across a temperature range of -55°C to 175°C. Key switching characteristics include a 31ns fall time, 9.6ns turn-off delay, and 11ns turn-on delay.
PackageTO-220-3
Current Rating-5.3A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFI9Z14GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.3A |
| Current Rating | -5.3A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 27W |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 9.6ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | -60V |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFI9Z14GPBF Datasheet
Download the complete datasheet for Vishay IRFI9Z14GPBF to view detailed technical specifications.
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