P-channel MOSFET featuring a 60V drain-source breakdown voltage and 8.5A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 280mΩ drain-source resistance and a maximum power dissipation of 37W. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 13ns turn-on delay and a 29ns fall time. This component is ROHS compliant and lead-free.
PackageTO-220-3
Current Rating-8.5A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFI9Z24GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
8.5A
Current Rating
-8.5A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
60V
Fall Time
29ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
570pF
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
37W
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
37W
Radiation Hardening
No
Rds On Max
280mR
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
13ns
DC Rated Voltage
-60V
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI9Z24GPBF Datasheet
Download the complete datasheet for Vishay IRFI9Z24GPBF to view detailed technical specifications.
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