P-channel MOSFET featuring a 60V drain-source breakdown voltage and 8.5A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 280mΩ drain-source resistance and a maximum power dissipation of 37W. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 13ns turn-on delay and a 29ns fall time. This component is ROHS compliant and lead-free.
PackageTO-220-3
Current Rating-8.5A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFI9Z24GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8.5A |
| Current Rating | -8.5A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 570pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 37W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | -60V |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFI9Z24GPBF Datasheet
Download the complete datasheet for Vishay IRFI9Z24GPBF to view detailed technical specifications.
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