N-Channel Power MOSFET, 650V Vdss, 5.1A Continuous Drain Current, 0.93 Ohm Rds On. Features 1.417nF Input Capacitance, 14ns Turn-On Delay, and 18ns Fall Time. Operates from -55°C to 150°C with a 60W Max Power Dissipation. Packaged in a TO-220AB, through-hole mount, RoHS compliant configuration.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIB5N65APBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.1A
Drain to Source Resistance
930mR
Drain to Source Voltage (Vdss)
650V
Fall Time
18ns
Gate to Source Voltage (Vgs)
30V
Height
9.8mm
Input Capacitance
1.417nF
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
930mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
34ns
Turn-On Delay Time
14ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFIB5N65APBF Datasheet
Download the complete datasheet for Vishay IRFIB5N65APBF to view detailed technical specifications.
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