
N-Channel Power MOSFET, 650V Vdss, 5.1A Continuous Drain Current, 0.93 Ohm Rds On. Features 1.417nF Input Capacitance, 14ns Turn-On Delay, and 18ns Fall Time. Operates from -55°C to 150°C with a 60W Max Power Dissipation. Packaged in a TO-220AB, through-hole mount, RoHS compliant configuration.
Vishay IRFIB5N65APBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Resistance | 930mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.8mm |
| Input Capacitance | 1.417nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 930mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFIB5N65APBF to view detailed technical specifications.
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