N-channel Silicon Metal-oxide Semiconductor FET designed for power applications. Features a 600V drain-to-source voltage and a continuous drain current of 5.5A. Offers a low on-resistance of 750mΩ with fast switching characteristics including a 13ns turn-on delay and 22ns fall time. Packaged in a TO-220AB through-hole mount with a maximum power dissipation of 60W and an operating temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFIB6N60A technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.5A
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
600V
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Height
9.8mm
Input Capacitance
1.4nF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
750mR
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
13ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFIB6N60A Datasheet
Download the complete datasheet for Vishay IRFIB6N60A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
