N-channel Silicon Metal-oxide Semiconductor FET designed for power applications. Features a 600V drain-to-source voltage and a continuous drain current of 5.5A. Offers a low on-resistance of 750mΩ with fast switching characteristics including a 13ns turn-on delay and 22ns fall time. Packaged in a TO-220AB through-hole mount with a maximum power dissipation of 60W and an operating temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIB6N60A technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.8mm |
| Input Capacitance | 1.4nF |
| Lead Free | Contains Lead |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFIB6N60A Datasheet
Download the complete datasheet for Vishay IRFIB6N60A to view detailed technical specifications.
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