N-Channel Power MOSFET featuring 600V drain-source voltage and 5.5A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 750mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 60W. Key switching characteristics include a 13ns turn-on delay and 22ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power60W
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Technical Specifications
Vishay IRFIB6N60APBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 750mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.8mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFIB6N60APBF Datasheet
Download the complete datasheet for Vishay IRFIB6N60APBF to view detailed technical specifications.
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