N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 2.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 2.2-ohm drain-to-source resistance (Rds On Max) and a maximum power dissipation of 35W. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 14ns fall time, 11ns turn-on delay, and 35ns turn-off delay.
PackageTO-220-3
Current Rating2.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIBC30GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | 2.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 660pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 2.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 600V |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFIBC30GPBF Datasheet
Download the complete datasheet for Vishay IRFIBC30GPBF to view detailed technical specifications.
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