
N-Channel Power MOSFET, 600V Vdss, 3.5A Continuous Drain Current (ID). Features 1.2 Ohm Rds On, 4A current rating, and 40W max power dissipation. Operates from -55°C to 150°C with a 20V Gate to Source voltage. This single-element silicon FET is housed in a TO-220-3 through-hole package. Includes 12ns turn-on delay and 27ns turn-off delay.
Vishay IRFIBC40GLC technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 4A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 1.1nF |
| Lead Free | Contains Lead |
| Length | 10.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 600V |
| Weight | 0.211644oz |
| Width | 4.8mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay IRFIBC40GLC to view detailed technical specifications.
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