N-Channel Power MOSFET, 600V Vdss, 3.5A Continuous Drain Current (ID). Features 1.2 Ohm Rds On, 4A current rating, and 40W max power dissipation. Operates from -55°C to 150°C with a 20V Gate to Source voltage. This single-element silicon FET is housed in a TO-220-3 through-hole package. Includes 12ns turn-on delay and 27ns turn-off delay.
PackageTO-220-3
Current Rating4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIBC40GLC technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
3.5A
Current Rating
4A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
600V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.1nF
Lead Free
Contains Lead
Length
10.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.2R
RoHS Compliant
No
Turn-Off Delay Time
27ns
Turn-On Delay Time
12ns
DC Rated Voltage
600V
Weight
0.211644oz
Width
4.8mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFIBC40GLC Datasheet
Download the complete datasheet for Vishay IRFIBC40GLC to view detailed technical specifications.
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