
N-channel Silicon Metal-oxide Semiconductor FET, TO-220AB package, 600V drain-to-source voltage, 3.5A continuous drain current, and 1.2Ω drain-to-source resistance. Features include a 1.1nF input capacitance, 12ns turn-on delay, 17ns fall time, and 27ns turn-off delay. Maximum power dissipation is 40W, with operating temperatures from -55°C to 150°C. This through-hole mount component is RoHS compliant.
Vishay IRFIBC40GLCPBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFIBC40GLCPBF to view detailed technical specifications.
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