N-channel Silicon Metal-oxide Semiconductor FET, TO-220AB package, 600V drain-to-source voltage, 3.5A continuous drain current, and 1.2Ω drain-to-source resistance. Features include a 1.1nF input capacitance, 12ns turn-on delay, 17ns fall time, and 27ns turn-off delay. Maximum power dissipation is 40W, with operating temperatures from -55°C to 150°C. This through-hole mount component is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Vishay IRFIBC40GLCPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
3.5A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
600V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.1nF
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
1.2R
RoHS Compliant
Yes
Turn-Off Delay Time
27ns
Turn-On Delay Time
12ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFIBC40GLCPBF Datasheet
Download the complete datasheet for Vishay IRFIBC40GLCPBF to view detailed technical specifications.
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