N-Channel Power MOSFET with 800V drain-source breakdown voltage and 1.4A continuous drain current. Features 6.5 ohm drain-source resistance (Rds On Max) and 30W power dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-220AB package for through-hole mounting. Includes fast switching characteristics with turn-on delay of 8.2ns and fall time of 27ns.
PackageTO-220-3
Current Rating1.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIBE20G technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
1.4A
Current Rating
1.4A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
6.5R
Drain to Source Voltage (Vdss)
800V
Fall Time
27ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
530pF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
6.5R
RoHS Compliant
No
Turn-Off Delay Time
58ns
Turn-On Delay Time
8.2ns
DC Rated Voltage
800V
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFIBE20G Datasheet
Download the complete datasheet for Vishay IRFIBE20G to view detailed technical specifications.
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