N-Channel Power MOSFET with 800V drain-source breakdown voltage and 1.4A continuous drain current. Features 6.5 ohm drain-source resistance (Rds On Max) and 30W power dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-220AB package for through-hole mounting. Includes fast switching characteristics with turn-on delay of 8.2ns and fall time of 27ns.
PackageTO-220-3
Current Rating1.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIBE20G technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 1.4A |
| Current Rating | 1.4A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 6.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 530pF |
| Lead Free | Contains Lead |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 6.5R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 8.2ns |
| DC Rated Voltage | 800V |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFIBE20G Datasheet
Download the complete datasheet for Vishay IRFIBE20G to view detailed technical specifications.
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