N-Channel Power MOSFET with 800V drain-source breakdown voltage and 1.4A continuous drain current. Features 6.5 ohm drain-source resistance (Rds On Max) and 30W power dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-220AB package for through-hole mounting. Includes fast switching characteristics with turn-on delay of 8.2ns and fall time of 27ns.
Vishay IRFIBE20G technical specifications.
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