N-channel power MOSFET featuring 800V drain-source breakdown voltage and 1.4A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 6.5 ohm drain-source on-resistance and 30W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates within a -55°C to 150°C temperature range. Key switching characteristics include an 8.2ns turn-on delay and 58ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Vishay IRFIBE20GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 6.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 6.5R |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 530pF |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 6.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 8.2ns |
| DC Rated Voltage | 800V |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFIBE20GPBF Datasheet
Download the complete datasheet for Vishay IRFIBE20GPBF to view detailed technical specifications.
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