N-Channel Power MOSFET, 800V Vdss, 2.1A continuous drain current, and 3 Ohm Rds On. This silicon Metal-oxide Semiconductor FET features a TO-220AB package with through-hole mounting. Key electrical characteristics include a 12ns turn-on delay, 30ns fall time, and 82ns turn-off delay, with an input capacitance of 1.3nF. Maximum power dissipation is 35W, operating temperature range is -55°C to 150°C.
PackageTO-220-3
Current Rating2.1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIBE30G technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.1A
Current Rating
2.1A
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
800V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.3nF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3R
RoHS Compliant
No
Turn-Off Delay Time
82ns
Turn-On Delay Time
12ns
DC Rated Voltage
800V
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFIBE30G Datasheet
Download the complete datasheet for Vishay IRFIBE30G to view detailed technical specifications.
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