IRFIBE30GPBF

N-Channel Power MOSFET, 800V Vdss, 2.1A continuous drain current, and 3 Ohm drain-source on-resistance. This silicon metal-oxide semiconductor FET features a TO-220AB package for through-hole mounting. Key specifications include a 1.3nF input capacitance, 35W max power dissipation, and operating temperatures from -55°C to 150°C. It is RoHS compliant with a 4V threshold voltage and fast switching times, including a 12ns turn-on delay.