N-Channel Power MOSFET, 900V Vdss, 1.2A continuous drain current, and 8 Ohm Rds On. This silicon, metal-oxide semiconductor FET features a TO-220AB package with 3 pins for through-hole mounting. Key electrical characteristics include 8ns turn-on delay, 32ns fall time, and 56ns turn-off delay, with an input capacitance of 490pF. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 30W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIBF20G technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
1.2A
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
900V
Fall Time
32ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
490pF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
8R
RoHS Compliant
No
Turn-Off Delay Time
56ns
Turn-On Delay Time
8ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFIBF20G Datasheet
Download the complete datasheet for Vishay IRFIBF20G to view detailed technical specifications.
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