N-Channel Power MOSFET, 900V Vdss, 1.2A continuous drain current, and 8 Ohm drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB package with through-hole mounting. Key specifications include a 4V threshold voltage, 8ns turn-on delay, 32ns fall time, and 490pF input capacitance. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 30W. This component is RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIBF20GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 8R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 8R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFIBF20GPBF Datasheet
Download the complete datasheet for Vishay IRFIBF20GPBF to view detailed technical specifications.
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