N-channel silicon power MOSFET with 900V drain-source voltage and 1.9A continuous drain current. Features 3.7 ohm drain-to-source resistance, 14ns turn-on delay, and 30ns fall time. This through-hole component is housed in a TO-220AB package, offering a maximum power dissipation of 35W and an operating temperature range of -55°C to 150°C.
PackageTO-220-3
Current Rating1.9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIBF30G technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
1.9A
Current Rating
1.9A
Drain to Source Resistance
3.7R
Drain to Source Voltage (Vdss)
900V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.2nF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3.7R
RoHS Compliant
No
Turn-Off Delay Time
90ns
Turn-On Delay Time
14ns
DC Rated Voltage
900V
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFIBF30G Datasheet
Download the complete datasheet for Vishay IRFIBF30G to view detailed technical specifications.
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