N-Channel Power MOSFET, 60V Vdss, 14A Continuous Drain Current, and 100mR Rds On Max. This silicon metal-oxide semiconductor FET features a TO-220AB package with through-hole mounting. Key electrical characteristics include a 4V nominal Vgs, 640pF input capacitance, and fast switching times with a 13ns turn-on delay and 25ns turn-off delay. Operating temperature range is -55°C to 175°C with a maximum power dissipation of 37W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIZ24GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100MR |
| Dual Supply Voltage | 60V |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 640pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFIZ24GPBF Datasheet
Download the complete datasheet for Vishay IRFIZ24GPBF to view detailed technical specifications.
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