N-channel power MOSFET featuring 60V drain-source voltage and 37A continuous drain current. Offers low 18mΩ drain-source on-resistance and 50W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, with a threshold voltage of 4V and a nominal gate-source voltage of 4V. Operates across a wide temperature range from -55°C to 175°C, with fast switching times including an 8.1ns turn-on delay. This RoHS compliant component is constructed with silicon metal-oxide semiconductor technology.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIZ48GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
37A
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
18mR
Fall Time
250ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
2.4nF
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
210ns
Turn-On Delay Time
8.1ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFIZ48GPBF Datasheet
Download the complete datasheet for Vishay IRFIZ48GPBF to view detailed technical specifications.
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