N-channel power MOSFET featuring 60V drain-source voltage and 37A continuous drain current. Offers low 18mΩ drain-source on-resistance and 50W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, with a threshold voltage of 4V and a nominal gate-source voltage of 4V. Operates across a wide temperature range from -55°C to 175°C, with fast switching times including an 8.1ns turn-on delay. This RoHS compliant component is constructed with silicon metal-oxide semiconductor technology.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIZ48GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 37A |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 18mR |
| Fall Time | 250ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 8.1ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFIZ48GPBF Datasheet
Download the complete datasheet for Vishay IRFIZ48GPBF to view detailed technical specifications.
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