N-channel power MOSFET with 60V drain-source breakdown voltage and 2.7A continuous drain current. Features low 200mΩ drain-source resistance (Rds On Max) and a fast 19ns fall time. Operates with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V. This surface-mount device is housed in a SOT-223 package, offering 2W maximum power dissipation and a wide operating temperature range from -55°C to 150°C.
PackageSOT-223
Current Rating2.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFL014TR technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
2.7A
Current Rating
2.7A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
300pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
4V
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
200mR
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Turn-Off Delay Time
13ns
Turn-On Delay Time
10ns
DC Rated Voltage
60V
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFL014TR Datasheet
Download the complete datasheet for Vishay IRFL014TR to view detailed technical specifications.
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