
N-channel power MOSFET with 60V drain-source breakdown voltage and 2.7A continuous drain current. Features low 200mΩ drain-source resistance (Rds On Max) and a fast 19ns fall time. Operates with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V. This surface-mount device is housed in a SOT-223 package, offering 2W maximum power dissipation and a wide operating temperature range from -55°C to 150°C.
Vishay IRFL014TR technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.7A |
| Current Rating | 2.7A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 300pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay IRFL014TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
