N-channel JFET transistor for small signal applications, featuring a 100V drain-source voltage and 1.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 540mΩ and operates within a temperature range of -55°C to 150°C. Designed for surface mounting in a SOT-223 package, it boasts fast switching characteristics with a turn-on delay of 6.9ns and a fall time of 9.4ns. Maximum power dissipation is rated at 3.1W.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFL110 technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.8mm |
| Input Capacitance | 180pF |
| Lead Free | Contains Lead |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 80 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 540mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.9ns |
| Weight | 0.008826oz |
| Width | 3.7mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFL110 Datasheet
Download the complete datasheet for Vishay IRFL110 to view detailed technical specifications.
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