N-channel, silicon, metal-oxide semiconductor field-effect transistor designed for small signal applications. Features a continuous drain current of 1.5A and a drain-to-source breakdown voltage of 100V. Offers a maximum drain-source on-resistance of 540mΩ. Packaged in a SOT-223 surface-mount case, this RoHS compliant component operates within a temperature range of -55°C to 150°C. Includes a threshold voltage of 4V and a gate-to-source voltage rating of 20V.
PackageSOT-223
Voltage100V
Current15A
Current Rating1.5A
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Technical Specifications
Vishay IRFL110PBF technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
1.5A
Current
15A
Current Rating
1.5A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
540mR
Fall Time
9.4ns
Gate to Source Voltage (Vgs)
20V
Height
1.8mm
Input Capacitance
180pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
4000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
540mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.9ns
Voltage
100V
DC Rated Voltage
100V
Weight
0.008826oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFL110PBF Datasheet
Download the complete datasheet for Vishay IRFL110PBF to view detailed technical specifications.
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