
N-channel, silicon, metal-oxide semiconductor field-effect transistor designed for small signal applications. Features a continuous drain current of 1.5A and a drain-to-source breakdown voltage of 100V. Offers a maximum drain-source on-resistance of 540mΩ. Packaged in a SOT-223 surface-mount case, this RoHS compliant component operates within a temperature range of -55°C to 150°C. Includes a threshold voltage of 4V and a gate-to-source voltage rating of 20V.
Vishay IRFL110PBF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.5A |
| Current | 15A |
| Current Rating | 1.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.8mm |
| Input Capacitance | 180pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.9ns |
| Voltage | 100V |
| DC Rated Voltage | 100V |
| Weight | 0.008826oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFL110PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
