IRFL9014PBF

P-channel power MOSFET, 60V drain-source breakdown voltage, 1.8A continuous drain current, and 500mΩ maximum drain-source on-resistance. Features a 20V gate-to-source voltage, 270pF input capacitance, and 3.1W maximum power dissipation. This single-element silicon FET is housed in a SOT-223 surface-mount package, offering fast switching speeds with turn-on delay of 11ns and fall time of 31ns. Operating temperature range is -55°C to 150°C, and the component is RoHS compliant.