
P-channel power MOSFET, 60V drain-source breakdown voltage, 1.8A continuous drain current, and 500mΩ maximum drain-source on-resistance. Features a 20V gate-to-source voltage, 270pF input capacitance, and 3.1W maximum power dissipation. This single-element silicon FET is housed in a SOT-223 surface-mount package, offering fast switching speeds with turn-on delay of 11ns and fall time of 31ns. Operating temperature range is -55°C to 150°C, and the component is RoHS compliant.
Vishay IRFL9014PBF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.8A |
| Current | 18A |
| Current Rating | -1.8A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 500mR |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.45mm |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 2W |
| Rds On Max | 500mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 9.6ns |
| Turn-On Delay Time | 11ns |
| Voltage | 60V |
| DC Rated Voltage | -60V |
| Weight | 0.008826oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFL9014PBF to view detailed technical specifications.
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