P-channel JFET transistor for surface mounting, featuring a 100V drain-to-source voltage (Vdss) and 1.1A continuous drain current (ID). This silicon Metal-oxide Semiconductor FET offers a low drain-to-source resistance of 1.2 Ohms and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 20V gate-to-source voltage (Vgs), 200pF input capacitance, and switching times of 10ns (turn-on), 15ns (turn-off), and 17ns (fall). Packaged in a SOT-223 case, this component has a maximum power dissipation of 3.1W.
PackageSOT-223
Current Rating-1.1A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFL9110TR technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
1.1A
Current Rating
-1.1A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
100V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
1.45mm
Input Capacitance
200pF
Lead Free
Contains Lead
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
1.2R
RoHS Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
DC Rated Voltage
-100V
Weight
0.008826oz
Width
3.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFL9110TR Datasheet
Download the complete datasheet for Vishay IRFL9110TR to view detailed technical specifications.
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