Vishay
IRFP048R
Power Field-Effect Transistor, 57A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
MountingThrough Hole
Power190W
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Technical Specifications
Vishay IRFP048R technical specifications.
General
Continuous Drain Current (ID)
70A
Drain to Source Breakdown Voltage
60V
Fall Time
250ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Through Hole
Packaging
Bulk
Power Dissipation
190W
RoHS Compliant
No
Turn-Off Delay Time
210ns
Turn-On Delay Time
8.1ns
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFP048R Datasheet
Download the complete datasheet for Vishay IRFP048R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.