N-Channel Power MOSFET, 100V Vdss, 41A continuous drain current, and 55mR Rds On. This silicon Metal-oxide Semiconductor FET features a TO-247 package with 3 pins, suitable for through-hole mounting. It offers a maximum power dissipation of 230W and operates across a temperature range of -55°C to 175°C. Key switching characteristics include a 16ns turn-on delay and 60ns turn-off delay.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power230W
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Technical Specifications
Vishay IRFP150 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
41A
Drain to Source Resistance
55mR
Drain to Source Voltage (Vdss)
100V
Fall Time
81ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
2.8nF
Length
15.87mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
230W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
230W
Radiation Hardening
No
Rds On Max
55mR
RoHS Compliant
No
Turn-Off Delay Time
60ns
Turn-On Delay Time
16ns
DC Rated Voltage
100V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFP150 Datasheet
Download the complete datasheet for Vishay IRFP150 to view detailed technical specifications.
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