
N-Channel Power MOSFET, 100V Vdss, 41A continuous drain current, and 55mR Rds On. This silicon Metal-oxide Semiconductor FET features a TO-247 package with 3 pins, suitable for through-hole mounting. It offers a maximum power dissipation of 230W and operates across a temperature range of -55°C to 175°C. Key switching characteristics include a 16ns turn-on delay and 60ns turn-off delay.
Vishay IRFP150 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 41A |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 81ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.8nF |
| Length | 15.87mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 100V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay IRFP150 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
