
N-Channel Power MOSFET, TO-247AC package, featuring 100V drain-source breakdown voltage and 41A continuous drain current. Offers a low 55mΩ drain-source on-resistance at a nominal 4V gate-source voltage. This silicon, metal-oxide semiconductor FET supports a maximum power dissipation of 230W and operates from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 81ns.
Vishay IRFP150PBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 41A |
| Current Rating | 41A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 55mR |
| Fall Time | 81ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.8nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 230W |
| Rds On Max | 55mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 100V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFP150PBF to view detailed technical specifications.
No datasheet is available for this part.
