N-channel power MOSFET featuring 600V drain-source voltage and 15A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 460mΩ on-state resistance and a maximum power dissipation of 280W. Designed for through-hole mounting in a TO-247-3 plastic package, it operates from -55°C to 150°C with a 5V threshold voltage and a 30V gate-source voltage rating. Key switching characteristics include a 20ns turn-on delay and a 5.5ns fall time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP15N60LPBF technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 460mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 2.72nF |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| On-State Resistance | 460R |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 460mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 20ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFP15N60LPBF Datasheet
Download the complete datasheet for Vishay IRFP15N60LPBF to view detailed technical specifications.
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