N-channel power MOSFET featuring 500V drain-source breakdown voltage and 16A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 320mΩ drain-source resistance at a nominal gate-source voltage of 5V. Designed for through-hole mounting in a TO-247 package, it boasts a maximum power dissipation of 220W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 21ns turn-on delay and a 28ns fall time.
PackageTO-247-3
Current Rating16A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP17N50L technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
16A
Current Rating
16A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
320mR
Drain to Source Voltage (Vdss)
500V
Fall Time
28ns
Gate to Source Voltage (Vgs)
30V
Height
20.7mm
Input Capacitance
2.76nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
220W
Mount
Through Hole
Nominal Vgs
5V
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
220W
Rds On Max
320mR
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Threshold Voltage
5V
Turn-Off Delay Time
50ns
Turn-On Delay Time
21ns
DC Rated Voltage
500V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFP17N50L Datasheet
Download the complete datasheet for Vishay IRFP17N50L to view detailed technical specifications.
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