N-Channel Power MOSFET featuring 600V drain-source voltage and 21A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 320mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-247 package, it operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 330W. Key switching characteristics include a 20ns turn-on delay and a 10ns fall time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP21N60L technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
21A
Drain to Source Resistance
320mR
Drain to Source Voltage (Vdss)
600V
Fall Time
10ns
Gate to Source Voltage (Vgs)
30V
Height
20.7mm
Input Capacitance
4nF
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
320mR
RoHS Compliant
No
Turn-Off Delay Time
33ns
Turn-On Delay Time
20ns
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFP21N60L Datasheet
Download the complete datasheet for Vishay IRFP21N60L to view detailed technical specifications.
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