N-Channel Power MOSFET featuring 600V drain-source voltage and 22A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 280mΩ maximum drain-source resistance. Designed for through-hole mounting in a TO-247-3 package, it operates from -55°C to 150°C with a maximum power dissipation of 370W. Key switching characteristics include a 26ns turn-on delay and 37ns fall time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP22N60KPBF technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 3.57nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 370W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 26ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFP22N60KPBF Datasheet
Download the complete datasheet for Vishay IRFP22N60KPBF to view detailed technical specifications.
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