N-Channel Power MOSFET, 200V Vdss, 30A continuous drain current, and 85mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-247AC package, 190W power dissipation, and operates from -55°C to 150°C. Key switching parameters include a 16ns turn-on delay and 62ns fall time. The component is RoHS compliant.
PackageTO-247AC
Current Rating30A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP250PBF technical specifications.
General
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 85mR |
| Fall Time | 62ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.8nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 200V |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFP250PBF Datasheet
Download the complete datasheet for Vishay IRFP250PBF to view detailed technical specifications.
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