N-Channel Power MOSFET, 200V Vdss, 30A continuous drain current, and 85mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-247AC package, 190W power dissipation, and operates from -55°C to 150°C. Key switching parameters include a 16ns turn-on delay and 62ns fall time. The component is RoHS compliant.
PackageTO-247AC
Current Rating30A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP250PBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
85mR
Fall Time
62ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
2.8nF
Lead Free
Lead Free
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
85mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
70ns
Turn-On Delay Time
16ns
DC Rated Voltage
200V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFP250PBF Datasheet
Download the complete datasheet for Vishay IRFP250PBF to view detailed technical specifications.
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