N-Channel Power MOSFET, TO-247 package, featuring 400V Drain-to-Source Voltage (Vdss) and 11A Continuous Drain Current (ID). Offers a low 0.55 ohm Drain-to-Source Resistance (Rds On Max). This silicon Metal-oxide Semiconductor FET operates with a 20V Gate-to-Source Voltage (Vgs) and boasts a maximum power dissipation of 150W. Ideal for through-hole mounting, it has a maximum operating temperature of 150°C.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP340 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
11A
Drain to Source Resistance
550mR
Drain to Source Voltage (Vdss)
400V
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
1.4nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
550mR
RoHS Compliant
No
Turn-Off Delay Time
50ns
Turn-On Delay Time
14ns
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFP340 Datasheet
Download the complete datasheet for Vishay IRFP340 to view detailed technical specifications.
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