N-Channel Power MOSFET, TO-247 package, featuring 400V Drain-to-Source Voltage (Vdss) and 11A Continuous Drain Current (ID). Offers a low 0.55 ohm Drain-to-Source Resistance (Rds On Max). This silicon Metal-oxide Semiconductor FET operates with a 20V Gate-to-Source Voltage (Vgs) and boasts a maximum power dissipation of 150W. Ideal for through-hole mounting, it has a maximum operating temperature of 150°C.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFP340 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.4nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 14ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFP340 Datasheet
Download the complete datasheet for Vishay IRFP340 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
