N-Channel Power MOSFET featuring 400V drain-source voltage and 16A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.3ohm drain-source resistance and 190W power dissipation. Designed for through-hole mounting in a TO-247-3 package, it operates from -55°C to 150°C with fast switching characteristics including a 16ns turn-on delay and 47ns fall time.
PackageTO-247-3
Current Rating16A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP350 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.6nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Rds On Max | 300mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 87ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 400V |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFP350 Datasheet
Download the complete datasheet for Vishay IRFP350 to view detailed technical specifications.
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