N-channel power MOSFET featuring 400V drain-source voltage and 23A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 200mΩ drain-source resistance. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 280W. Key switching characteristics include an 18ns turn-on delay and a 67ns fall time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP360 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 67ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 4.5nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 200mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 18ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFP360 Datasheet
Download the complete datasheet for Vishay IRFP360 to view detailed technical specifications.
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