N-channel power MOSFET featuring 400V drain-source voltage and 23A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 200mΩ drain-source resistance. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 280W. Key switching characteristics include an 18ns turn-on delay and a 67ns fall time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP360 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
23A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
400V
Fall Time
67ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
4.5nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
280W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
200mR
RoHS Compliant
No
Turn-Off Delay Time
100ns
Turn-On Delay Time
18ns
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFP360 Datasheet
Download the complete datasheet for Vishay IRFP360 to view detailed technical specifications.
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