N-Channel Power MOSFET, 500V Drain-Source Voltage (Vdss) and 11A Continuous Drain Current (ID). Features 600mΩ Drain-to-Source Resistance (Rds On Max) and 180W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET offers a 1.9nF Input Capacitance and operates within a -55°C to 150°C temperature range. Packaged in a TO-247-3 through-hole mount, it includes a 32ns fall time and 62ns turn-off delay time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP448 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.9nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 18ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFP448 Datasheet
Download the complete datasheet for Vishay IRFP448 to view detailed technical specifications.
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