N-Channel Power MOSFET, 500V Drain-Source Voltage (Vdss) and 11A Continuous Drain Current (ID). Features 600mΩ Drain-to-Source Resistance (Rds On Max) and 180W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET offers a 1.9nF Input Capacitance and operates within a -55°C to 150°C temperature range. Packaged in a TO-247-3 through-hole mount, it includes a 32ns fall time and 62ns turn-off delay time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP448 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
11A
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
500V
Fall Time
32ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
1.9nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
180W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
600mR
RoHS Compliant
No
Turn-Off Delay Time
62ns
Turn-On Delay Time
18ns
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFP448 Datasheet
Download the complete datasheet for Vishay IRFP448 to view detailed technical specifications.
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