N-Channel Power MOSFET featuring 500V Drain-to-Source Voltage (Vdss) and 14A Continuous Drain Current (ID). This through-hole component offers a low Drain to Source Resistance (Rds On) of 400mR and a maximum power dissipation of 190W. Operating temperature range spans from -55°C to 150°C, with fast switching characteristics including a 17ns turn-on delay and 44ns fall time. Encased in a TO-247-3 package, this Metal-oxide Semiconductor FET is designed for demanding power applications.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Vishay IRFP450 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
14A
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
500V
Fall Time
44ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
2.6nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
400mR
RoHS Compliant
No
Turn-Off Delay Time
92ns
Turn-On Delay Time
17ns
DC Rated Voltage
500V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFP450 Datasheet
Download the complete datasheet for Vishay IRFP450 to view detailed technical specifications.
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