
N-Channel Power MOSFET featuring 500V Drain-to-Source Voltage (Vdss) and 14A Continuous Drain Current (ID). This through-hole component offers a low Drain to Source Resistance (Rds On) of 400mR and a maximum power dissipation of 190W. Operating temperature range spans from -55°C to 150°C, with fast switching characteristics including a 17ns turn-on delay and 44ns fall time. Encased in a TO-247-3 package, this Metal-oxide Semiconductor FET is designed for demanding power applications.
Vishay IRFP450 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.6nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 92ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay IRFP450 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
