N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 14A continuous drain current. This through-hole component offers a maximum power dissipation of 190W and a low drain-source on-resistance of 400mR. Operating temperature range spans from -55°C to 150°C, with a 20V gate-source voltage rating. Packaged in a TO-247-3 case, it includes fast switching characteristics with turn-on delay time of 17ns and fall time of 44ns.
PackageTO-247-3
Current Rating14A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP450PBF technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
400mR
Dual Supply Voltage
500V
Fall Time
44ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
2.6nF
Lead Free
Lead Free
Lead Pitch
5.45mm
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
400mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Termination
Through Hole
Threshold Voltage
4V
Turn-Off Delay Time
92ns
Turn-On Delay Time
17ns
DC Rated Voltage
500V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFP450PBF Datasheet
Download the complete datasheet for Vishay IRFP450PBF to view detailed technical specifications.
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