N-Channel Power MOSFET featuring 500V Drain-Source Breakdown Voltage and 20A Continuous Drain Current. This silicon, metal-oxide semiconductor FET offers a maximum on-resistance of 270mΩ at a nominal gate-source voltage of 4V. With a maximum power dissipation of 280W and operating temperature range of -55°C to 150°C, it is housed in a TO-247AC package for through-hole mounting. Key switching characteristics include a turn-on delay of 18ns and a fall time of 58ns. This component is RoHS compliant.
PackageTO-247AC
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP460PBF technical specifications.
General
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 270MR |
| Fall Time | 58ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 280W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFP460PBF Datasheet
Download the complete datasheet for Vishay IRFP460PBF to view detailed technical specifications.
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