IRFP9240

P-channel power MOSFET featuring 200V drain-source voltage and 12A continuous drain current. Offers 500mΩ drain-to-source resistance and 150W maximum power dissipation. This silicon metal-oxide semiconductor FET utilizes a TO-247 package for through-hole mounting. Key switching parameters include 14ns turn-on delay and 38ns fall time, with input capacitance at 1.2nF. Operates across a temperature range of -55°C to 150°C.