N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.6 ohm drain-source resistance and 180W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates from -55°C to 150°C with fast switching speeds, including an 18ns turn-on delay and 36ns fall time.
PackageTO-247-3
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPC50 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.7nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 600mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 88ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 600V |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFPC50 Datasheet
Download the complete datasheet for Vishay IRFPC50 to view detailed technical specifications.
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