N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.6 ohm drain-source resistance and 180W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates from -55°C to 150°C with fast switching speeds, including an 18ns turn-on delay and 36ns fall time.
PackageTO-247-3
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPC50 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
600V
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
2.7nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
180W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
600mR
RoHS Compliant
No
Turn-Off Delay Time
88ns
Turn-On Delay Time
18ns
DC Rated Voltage
600V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFPC50 Datasheet
Download the complete datasheet for Vishay IRFPC50 to view detailed technical specifications.
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