N-Channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.6 ohm drain-to-source resistance. Designed for through-hole mounting in a TO-247 package, it boasts a maximum power dissipation of 190W and operates within a temperature range of -55°C to 150°C. Key switching parameters include a 17ns turn-on delay and 26ns fall time.
PackageTO-247-3
Current Rating13A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPC50LC technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
11A
Current Rating
13A
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
600V
Fall Time
26ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
2.3nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
600mR
RoHS Compliant
No
Turn-Off Delay Time
41ns
Turn-On Delay Time
17ns
DC Rated Voltage
600V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFPC50LC Datasheet
Download the complete datasheet for Vishay IRFPC50LC to view detailed technical specifications.
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