N-Channel Power MOSFET, 800V Vdss, 4.1A continuous drain current, and 3 Ohm Rds On. Features a TO-247 package for through-hole mounting, with a maximum power dissipation of 125W and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with a 12ns turn-on delay and 30ns fall time, and a 1.3nF input capacitance. This silicon metal-oxide semiconductor FET is RoHS compliant.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPE30PBF technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
4.1A
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
800V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
3R
RoHS Compliant
Yes
Turn-Off Delay Time
82ns
Turn-On Delay Time
12ns
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFPE30PBF Datasheet
Download the complete datasheet for Vishay IRFPE30PBF to view detailed technical specifications.
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