N-Channel Power MOSFET, 800V Vdss, 4.1A continuous drain current, and 3 Ohm Rds On. Features a TO-247 package for through-hole mounting, with a maximum power dissipation of 125W and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with a 12ns turn-on delay and 30ns fall time, and a 1.3nF input capacitance. This silicon metal-oxide semiconductor FET is RoHS compliant.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFPE30PBF technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 12ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFPE30PBF Datasheet
Download the complete datasheet for Vishay IRFPE30PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
