N-Channel Power MOSFET featuring 800V drain-source voltage and 7.8A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.2 ohm drain-source on-resistance and 190W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it exhibits a 19ns turn-on delay and 39ns fall time. Operating temperature range is -55°C to 150°C.
PackageTO-247-3
Current Rating7.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPE50 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
7.8A
Current Rating
7.8A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
1.2R
Fall Time
39ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
3.1nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Turn-Off Delay Time
120ns
Turn-On Delay Time
19ns
DC Rated Voltage
800V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFPE50 Datasheet
Download the complete datasheet for Vishay IRFPE50 to view detailed technical specifications.
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