N-Channel Power MOSFET featuring 800V drain-source voltage and 7.8A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.2 ohm drain-source on-resistance and 190W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it exhibits a 19ns turn-on delay and 39ns fall time. Operating temperature range is -55°C to 150°C.
PackageTO-247-3
Current Rating7.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPE50 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 7.8A |
| Current Rating | 7.8A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 3.1nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 19ns |
| DC Rated Voltage | 800V |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFPE50 Datasheet
Download the complete datasheet for Vishay IRFPE50 to view detailed technical specifications.
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