N-Channel Power MOSFET with 800V Drain-Source Breakdown Voltage and 7.8A Continuous Drain Current. Features 1.2 Ohm maximum Drain-Source On-Resistance and 190W maximum power dissipation. This silicon metal-oxide semiconductor field-effect transistor is housed in a TO-247 package, suitable for through-hole mounting. Includes 39ns fall time and 120ns turn-off delay time. RoHS compliant.
PackageTO-247-3
Current Rating7.8A
MountingThrough Hole
Inductance11nH
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Technical Specifications
Vishay IRFPE50PBF technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
7.8A
Current Rating
7.8A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
1.2R
Dual Supply Voltage
800V
Fall Time
39ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Inductance
11nH
Input Capacitance
3.1nF
Lead Free
Lead Free
Lead Pitch
5.45mm
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Termination
Through Hole
Threshold Voltage
4V
Turn-Off Delay Time
120ns
Turn-On Delay Time
19ns
DC Rated Voltage
800V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFPE50PBF Datasheet
Download the complete datasheet for Vishay IRFPE50PBF to view detailed technical specifications.
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