N-Channel Power MOSFET with 800V Drain-Source Breakdown Voltage and 7.8A Continuous Drain Current. Features 1.2 Ohm maximum Drain-Source On-Resistance and 190W maximum power dissipation. This silicon metal-oxide semiconductor field-effect transistor is housed in a TO-247 package, suitable for through-hole mounting. Includes 39ns fall time and 120ns turn-off delay time. RoHS compliant.
PackageTO-247-3
Current Rating7.8A
MountingThrough Hole
Inductance11nH
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Technical Specifications
Vishay IRFPE50PBF technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 7.8A |
| Current Rating | 7.8A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 1.2R |
| Dual Supply Voltage | 800V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Inductance | 11nH |
| Input Capacitance | 3.1nF |
| Lead Free | Lead Free |
| Lead Pitch | 5.45mm |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 19ns |
| DC Rated Voltage | 800V |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFPE50PBF Datasheet
Download the complete datasheet for Vishay IRFPE50PBF to view detailed technical specifications.
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