N-Channel Power MOSFET, 900V Vdss, 3.6A Continuous Drain Current, and 3.7 Ohm Rds On. This silicon metal-oxide semiconductor FET features a TO-247 package with through-hole mounting. Key specifications include a maximum power dissipation of 125W, input capacitance of 1.2nF, and operating temperatures from -55°C to 150°C. It is RoHS compliant and designed for demanding power applications.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Vishay IRFPF30PBF technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 3.7R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 3.7R |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 3.7R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 14ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFPF30PBF Datasheet
Download the complete datasheet for Vishay IRFPF30PBF to view detailed technical specifications.
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