N-Channel Power MOSFET, 900V Vdss, 3.6A Continuous Drain Current, and 3.7 Ohm Rds On. This silicon metal-oxide semiconductor FET features a TO-247 package with through-hole mounting. Key specifications include a maximum power dissipation of 125W, input capacitance of 1.2nF, and operating temperatures from -55°C to 150°C. It is RoHS compliant and designed for demanding power applications.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power125W
Quick Jump:
Technical Specifications
Vishay IRFPF30PBF technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
3.6A
Drain to Source Resistance
3.7R
Drain to Source Voltage (Vdss)
900V
Drain-source On Resistance-Max
3.7R
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
3.7R
RoHS Compliant
Yes
Turn-Off Delay Time
90ns
Turn-On Delay Time
14ns
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFPF30PBF Datasheet
Download the complete datasheet for Vishay IRFPF30PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
